Last updated January 2006  

 

 

REFEREED PAPERS

 

" A Magnetotransport Study of AlGaN/GaN Heterostructures on Silicon,” S. Elhamri, W.C.   Mitchel, W. D. Mitchell, R. Berney, M. Ahoujja, J. C. Roberts, P. Rajagopal, T. Gehrke, E. L. Piner, K. J. Linthicum, Journal of Electronic Materials 34, 444(2005)

 

Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN,” Michael R. Hogsed, Mo Ahoujja, Mee-Yi Ryu, Yung Kee Yeo, James C. Petrosky and Robert L. Hengehold,  in GaN, AlN, InN and Their Alloys, edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, and Michael Manfra (Mater. Res. Soc. Symp. Proc. 831, Warrendale, PA , 2005), E11.35.

 “Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition,” M. Ahoujja, S. Elhamri, and R. Berney, Y.K. Yeo, and R. L. Hengehold, in GaN, AlN, InN and Their Alloys, edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, and Michael Manfra (Mater. Res. Soc. Symp. Proc. 831, Warrendale, PA , 2005), E3.19.

 

 “Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV Electron Radiation,”M. R. Hogsed, Y. K. Yeo, M. Ahoujja, Mee-Yi Ryu, and R. L. Hengehold, Appl. Phys. Lett. 86, 261906 (2005)

 

 “Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior,”  M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold, Mat. Res. Soc. Symp. Proc. Vol. 815, J5.21 (2004).

 

 “Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior,” M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold, Mat. Res. Soc. Symp. Proc. Vol. 764, 3.37 (2003).

 

“Electrical properties of MBE grown Si-doped AlxGa1-xN as a function of nominal Al  mole fraction up to 0.5”, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and J. E. Van Nostrand, Appl. Phys. Lett. 80, 1382 (2002).

 

“Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of  Al mole fraction,” M. Ahoujja, J. L. McFall, Y.K. Yeo, R. L. Hengehold, and J. E. Van Nostrand, Material Science and Engineering B91-92, 285-289 (2002).

 

 “Deep centers and their capture barriers in MOCVD-grown GaN,”  D. K. Johnstone, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and L. Guido, Mat. Res. Soc. Symp. Proc. Vol. 692, H2.7 (2002).

 

“Electrical properties of MBE grown Si-doped AlxGa1-xN as a function of  nominal Al mole fraction up to 0.5,” M. Ahoujja, Y.K. Yeo, R. L. Hengehold, and J. E. Van Nostrand, Mat. Res. Soc. Symp. Proc. Vol. 680E,  E3.5 (2001).

 

 “GaN deep level capture barriers,” D. Johnstone, M. Ahoujja, Y. K. Yeo, and L.Guido,  To appear in Proc. SPIE, Semiconductor Lasers and Photodetectors: Photodetector Materials and Devices VI, Gail J. Brown; Ed. (2001).

 

 “Electrical properties of boron doped p-SiGeC Grown on n--Si Substrate”, M. Ahoujja, Y.     K. Yeo, and R. L. Hengehold, D. C. Look, and Jim Huffman, Appl. Phys. Lett. 77, 1327 (2000).

 

 “Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by  MOCVD,” M. Ahoujja, Y. K. Yeo, and R. L. Hengehold, L. J. Guido, P. Mitev, and  D. K. Johnstone, 2000 International Semiconducting and Insulating Materials Conference, SIMC-XI, Editors C. Jagadish and N. J. Welham, IEEE Publishing, 2001, pp. 27-30.

 

 “Hall coefficient singularity observed from p-SiGeC grown on n--Si substrate”, M. Ahoujja, Y. K. Yeo, M. R. Smith, R. L. Hengehold, G. S. Pomrenke, and Jim Huffman., Compound Semiconductors, Berlin, Germany, 1999; Inst. Phys. Conf. Ser. No. 166, pp. 161-164

 

 “Effects of conduction band offset on two dimensional electron gas in delta-doped InGaAs-based heterostructures”, M. Ahoujja, W. C. Mitchel. S. Elhamri, R. S. Newrock, and Ikai Lo, Chinese Journal of Physics 37, 519 (1999).

 

 “Multi-layer conduction in epitaxial InSb grown on GaAs substrates”, M. Ahoujja,  William C. Mitchel, Eric Michel, and Manijeh Razeghi, Proceeding of the 10th  Conference on Semiconducting and Insulating Materials (SIMC-X) pp. 177-180 (1999).

 

 “Electrical Characterization of AlxGa1-xN for UV photodetector applications”, Adam W.Saxler, M. Ahoujja, W. C. Mitchel, Patrick Kung, Danielle Walker, and Manijeh Razeghi, Proc. SPIE Vol. 3629, p.211-222, Photodetectors: Materials and Devices, Gail J. Brown; Manijeh Razeghi; Eds (1999).

 

 “Mid-infrared photodetectors based on InAs/InGaSb type-II superlattices”, Chih-Hsiang  Lin,Gail J. Brown, W. C. Mitchel, M. Ahoujja, and Frank Szmulowicz, Proc. SPIE Vol.  3287, p. 22-29, Photodetectors: Materials and Devices III, Gail J. Brown; Ed. (1998).

 

"Transport coefficients of AlGaN/GaN heterostructures," M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock,  D. B. Mast, J. M. Redwing, M. A. Tischler, and J. S. Flynn, J. Eectron. Mater. 27, 210 (1998).

 

 “Negative persistent photoconductivity in II-VI ZnSSe/ZnCdSe quantum wells”, Ikai Lo, S. J. Chen, Y. C. Lee, Li-Wei Tu, W. C. Mitchel, M. Ahoujja, R. E. Perrin, R. C. Tu, Y. K. Su, W. H. Lan, and S. L. Tu, Phys. Rev. B 57, R6819 (1998).

 

"New developments in III‑nitride material and device application", M. Razeghi,  A. Saxler, P. Kung, D. Walker, X. Zhang, K. S. Kim, H. R. Vydyanath, J. Solomon, M. Ahoujja, and W. C. Mitchel, Physics of Semiconductor Devices, Vol. I (New Delhi, India, 1998), p.277.

 

"AlGaN/GaN heterostructures: effective mass and scattering times," S. Elhamri, R. S. Newrock, D. B. Mast, M. Ahoujja, W. C. Mitchel, J. M. Redwing, M. A. Tischler, and J. S. Flynn, Phys. Rev. B 57, 1374 (1998).

 

"High carrier lifetime InSb grown on GaAs substrates," E. Michel, H. Mohseni, J. D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. C. Mitchel, and M. Ahoujja, Appl. Phys. Lett. 71, 1071 (1997).

 

"Effect of well thickness on the two‑dimensional electron‑hole system in AlxGa1‑xSb/InAs quantum wells," Ikai Lo, Jih‑Chen Chiang, and Shiow‑Fon Tsay, W. C. Mitchel, M. Ahoujja, and R. Kaspi, Phys. Rev. B 55, 13677, (1997).

 

"InSb detectors and focal plane arrays on GaAs, Si, and Al2O3 substrates,"  E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. C. Mitchel, and M. Ahoujja, Infrared Applications of Semiconductors ‑  Materials, Processing and Devices, Mat. Res. Soc. Symp. Proc. 450, 79 (1997).

 

"Multiple subband population in delta doped AlAs0.56Sb0.44/In0.53Ga0.47As Heterostructures," M. Ahoujja, S. Elhamri, D.B. Mast, R.S. Newrock, W.C. Mitchel, A. Fathimulla, J. Appl. Phys. 81, 1609 (1997).

 

"Electrical properties of undoped GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, R. S. Newrock, D. B. Mast, S. T. Herbert, W. C. Mitchel, and M. Razeghi, Phys. Rev. B 54, 10688 (1996).

 

"Two dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H‑SiC and sapphire substrates," J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, D. B. Mast, and W. C. Mitchel, Appl. Phys. Lett. 69, 963 (1996).

 

The Effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells," M. Ahoujja, S. Elhamri, D.B. Mast, R.S. Newrock, W.C. Mitchel,      M. Razeghi, and M. Erdtman, Superlattices and Microstructures, 18, 679 (1995).

 

"Interface roughness scattering in thin quantum wells,"  S. Elhamri, M. Ahoujja, R. Hudgins, D. B. Mast, R.S. Newrock, W.C. Mitchel, M. Razeghi, M. Erdtman,Superlattices and Microstructures, 18, 672 (1995).

 

"Persistent photoconductivity effect in delta doped Al0.48In0.52As/Ga0.47In0.53As Heterostuctures," Ikai Lo, D.P. Wang, K.Y. Hsieh, T.F. Wang, W.C. Mitchel, M. Ahoujja, J.P. Cheng, A. Fathimulla, and H. Hier, Phys. Rev. B. 20, 14671 (1995).

 

"Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, K. Ravindran, D.B. Mast, R.S. Newrock, W.C. Mitchel, G.J. Brown, Ikai Lo, M. Razeghi, and X.G. He, Appl. Phys. Lett. 66, 171 (1995).

 

 "Second subband population in delta doped Al0.48In0.52As/Ga0.47In0.53As  Heterostuctures," Ikai Lo, W.C. Mitchel, M. Ahoujja, J.P. Cheng, A. Fathimulla, and H. Mier, Appl. Phys. Lett. 66, 754, (1995).

 

"Interface roughness scattering in thin undoped GaInP/GaAs quantum wells," W.C. Mitchel, G.J. Brown, Ikai Lo, S. Elhamri, M. Ahoujja, K. Ravindran, R.S. Newrock, M. Razeghi, and X.G. He, Appl. Phys. Lett. 65, 1578 (1994).

 

 

CONTRIBUTED PAPERS

 

 “LabView For Admittance Sepectroscopy,” R. Brodrick, M. Ahoujja, and R. Berney, Ohio APS Section, Dayton ( April, 2005)

 

 “Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN,” Michael R. Hogsed, Mo Ahoujja, Mee-Yi

 Ryu, Yung Kee Yeo, James C. Petrosky and Robert L. Hengehold,  Mater. Res. Soc. Boston, (Fall, 2004).

 

 “Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition,” M.

Ahoujja, S. Elhamri, and R. Berney, Y.K. Yeo, and R. L. Hengehold, Mater. Res. Soc. Boston, (Fall, 2004).

 

 Guest speaker: Department of Physics, Laurentian University, Sudbury, Ontario, Canada: “Wide Bandgap Semiconductors,”  March 19, 2004.

 

“A Study of AlGaN/GaN Heterostructures on Silicon,” S.Elhamri; R. Berney; M. Ahoujja; W. C. Mitchel; W. D. Mitchell; J. C.

 Roberts; P. Rajagopal; T. Gehrke; E. L. Piner; K. J.Linthicum; 46th TMC Electronic Materials Conference, June 2004

 

 “Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their

Annealing Behavior,”  M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold, Mat. Res. Soc. J5.21 April

(2004) San Francisco.

 

"Optical characterization of  proton irradiated 4H-SiC,”  M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold, Bull. Am. Phys. Soc. 48 (2003)

 

 “Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior,” M. Ahoujja, H.C. Crocket, M.B. Scott, Y.K. Yeo, and R.L. Hengehold, Mat. Res. Soc. Spring Meeting  (2003)

 

 “Deep Level Donor-like centers  in MOCVD-grown GaN,”  M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and D. K. Johnstone,

 Bull. Am. Phys. Soc. 47 (2002)

 

 “GaN deep level capture barriers,” D. Johnstone, M. Ahoujja, Y. K. Yeo, and L. Guido, SPIE, Photonic West, 20-26 January, 2001, San Jose, CA.

 

      “Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD,” M. Ahoujja, Y. K. Yeo,   and R. L. Hengehold, L. J. Guido, P. Mitev, and  D. K. Johnstone, presented at the XI- Semiconducting and Semiinsulating  Materials Conference, July 3-8, 2000, Canberra, Australia.

 

   3.      “Electrical properties of arsenic doped GaN films grown by MOCVD,” M. Ahoujja, Y. K. Yeo, R. L. Hengehold, L. J.  Guido, D. K. Johnstone, and Y. H. Kim, Bull. Am. Phys. Soc. 45 (2000).

 

     “Photocapacitance Transient Study of Arsenic Doped GaN,” Y. H. Kim, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, L. J. Guido, and D. K. Johnstone, Bull. Am. Phys. Soc. 45 (2000).

 

5.  “Electrical Chararcterization of SiGeC Films Grown on Si Substrates,” M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and G. S. Pomrenke, Bull. Am. Phys. Soc. 44 (1999).

 

6.   “Electrical properties of boron doped SiGeC grown on n--Si substrate,” M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and G. S. Pomrenke, Bull. Ohio Section Fall Meeting (1999).

 

7. “Hall coefficient singularity observed from p- SiGeC grown on n--Si substrate,” M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, and Jim Huffman.  Presented at  the 26th International Symposium on Compound Semiconductors, August 1999, Berlin

Germany.

 

  “InAs/InGaSb Type-II Superlattices for Mid-IR Photodetectors,” M. Ahoujja, W. C. Mitchel, G. J. Brown, F. Szmulowicz, C. -H. Lin, 40th Electronic Materials Conference,  Charlottesville, Virginia 52 (1998).

 

  “Effect of Concentration on Thermal Activation Energy of Nitrogen In 4H-SiC,” W. C. Mitchel, R. Perrin, M. Ahoujja, A. Evwaraye, S. R. Smith, 40th Electronic Materials  Conference, Charlottesville, Virginia 36 (1998).

 

 “Multi-Layer Conduction in Epitaxial InSb Grown On GaAs Substrates,” M. Ahoujja, W. C. Mitchel, E. Michel, and M. Razeghi, IEEE SIMC-X, Berkeley, Ca, June 1998.

 

 “Effects of conduction band offset on 2DEG in delta-doped InGaAs-based Heterostructures,” M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock, and D. B. Mast, Bull. Am. Phys. Soc. 43 (1998).

 

“Mobility Spectrum Analysis of Heteroepitaxially Grown InSb on GaAs Substrates,” M.Ahoujja, W. C. Mitchel, E. Michel, and M. Razeghi, Bull. Am. Phys. Soc. 43 (1998).

 

“Magneto-Transport Study of 2DEG in ZnSSe/ZnCdSe Quantum Wells,”  Ikai Lo, S. J. Chen, Y. C. Lee, Li-Wei Tu, W. C. Mitchel, M. Ahoujja, R. E. Perrin, R. C. Tu, Y. K. Su, W. H. Lan, and S. L. Tu, Bull. Am. Phys. Soc. 43 (1998).

 

            "Mid-I R Photodetectors Based on InAs/InGaSb Type-II Quantum Wells, G. J. Brown, M. Ahoujja, F. Szmulowicz, W. C. Mitchel, and C. H. Lin, MRS 1997 Fall Meeting, Boston, MA.

 

            "New developments in III‑nitride material and device application", M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, K. S. Kim, H. R. Vydyanath, J. Solomon, M. Ahoujja, and W. C. Mitchel, 9th International Workshop on Physics of  Semiconductor Devices (IWPSD), Delhi, India, 16‑20 December, 1997.

 

             "Deep Levels in SiC:V by High Temperature Transport Measurements," W.C. Mitchel, R. Perrin, J. Goldstein, M. Roth, M. Ahoujja, S. R. Smith,  A. O. Evwaraye, J. S. Solomon, G. Landis, Jason Jenny, H. McD. Hobgood, X. Augustine, and V. Balakrishna, International Conference on Silicon Carbide, III‑Nitrides and Related Materials, Stockholm, Sweeden, 31 Aug ‑ 05 Sep 1997.

       

             "GaN Grown using trimethylgalium and triethylgalium,"A. Saxler, P. Kung, X. Zhang, D. Walker, J. Solomon, M. Ahoujja, W. C. Mitchel, H. R. Vydyanath, and M. Razeghi, 19 International conference of Defects and Semiconductors, Aveiro, Portugal, 21 ‑ 25 Jul. 1997.

           

             "AlGaN/GaN heterostructures: effective mass," M. Ahoujja, S. Elhamri, R. S.  Newrock, D. B. Mast, W. C. Mitchel, J. M. Redwing, M. A. Tischler, and J. S. Flynn, Bull. Am. Phys. Soc. 42 (1997).

           

             "Multiple subband population in delta doped AlAs0.56Sb0.44/In0.53Ga0.47As Heterostructures," M. Ahoujja, Said Elhamri, D.B. Mast, R.S. Newrock, W.C. Mitchel, Bull. Am. Phys. Soc. 41 (1996).

 

             "Interface roughness in thin GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, D. B. Mast, R. S. Newrock, W. C. Mitchel, M. Razeghi, M. Erdtmann, European Physical Society 15th General Conference on the Condensed Matter Division, paper number 834, Italy (1996).

       

             "Two dimensional electron gas of AlGaN/GaN heterostructures grown by MOVPE on SiC and sapphire substrates," J. M. Redwing,  J. S. Flynn, M. A. Tischler, S. Elhamri, M. Ahoujja, R. S. Newrock, W. C. Mitchel, A. Saxler,  38th                                Conference, p 57, Santa Barbara, California, (1996).

       

             "Interface roughness scattering in thin quantum wells," S. Elhamri, M. Ahoujja, R. S. Newrock, D. B. Mast, W. C. Mitchel, M. Razeghi, M. Erdtmann,  9th Conference on Semiconducting and Insulating Materials ( IEEE SIMCÄ9 ), Toulouse, France April 29th Ä May 3rd  (1996).

   

              "Persistent photoconductivity in delta doped AlAs0.56Sb0.44/In0.53Ga0.47As Heterostructures," M. Ahoujja, S. Elhamri, D. B. Mast, R. S. Newrock, W. C. Mitchel, A. Fathimlla  9th Conference on Semiconducting and Insulating Materials ( IEEE SIMCÄ9 ), Toulouse France April 29th Ä May 3rd  (1996).

 

             "Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells,"  M. Ahoujja, S. Elhamri, D.B. Mast, R.S. Newrock, W.C. Mitchel, Manejeh Razeghi, G.J. Brown, and X. He, ICSMM8, XII (1995).

 

           "Interface roughness scattering in thin undoped GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, D.B. Mast, R.S. Newrock, W.C. Mitchel, G.J. Brown, M. Razeghi, and X.G. He, ICSMM8, VIII (1995).

   

             "Interface roughness scattering in thin undoped GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, K. Ravindran, R. S. Newrock, W. C. Mitchel, G. J. Brown, I. Lo, M. Razeghi, X. He, Bull. Am. Phys. Soc., 40, 252 (1995).

 

 

"Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells," M. Ahoujja, S. Elhamri, K. Ravindran, D. B. Mast, R. S. Newrock,  W. C. Mitchel, I. Lo, M. Razeghi, X. He, Bull. Am. Phys. Soc., 40, 698 (1995).

 

 "Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells," W. C. Mitchel, S. Hedge, S. Elhamri, M. Ahoujja, R. S. Newrock, M. Razeghi, M. Erdtmann. 37th Electronic Materials Conference, Charlottesville, Virginia 36 (1995).

 

"Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells," S. Elhamri, M. Ahoujja, K. Ravindran, D. B. Mast, R. S. Newrock, W. C. Mitchel, G. J. Brown, I. Lo, M. Razeghi, X. He, Bull. Am. Phys. Soc., 39, 749 (1994).

 

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